Abstract
Single-crystalline gallium nitride nanobelts have been synthesized through the reaction of gallium vapor with flowing ammonia using nickel as a catalyst. The as-synthesized products were characterized using X-ray powder diffraction (XRD), scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction (SAED). XRD and SAED results revealed that the products are pure, single-crystalline GaN with hexagonal structure. The widths and thickness of the nanobelts ranged from 80 to 200nm, and 10 to 30nm, respectively. The lengths were up to several tens of micrometers. The nanobelts had smooth surface with no amorphous sheath, and a sharp-tip end. The growth mechanism of nanobelts was discussed.
Original language | English |
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Pages (from-to) | 315-318 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 126 |
Issue number | 6 |
DOIs | |
Publication status | Published - May 2003 |
Keywords
- A. Gallium nitride
- A. Nanostructures
- A. Semiconductors
- B. Nanofabrications
- C. Scanning and transmission electron microscopy