Abstract
An on-chip bandpass filter (BPF) is designed and fabricated in a 0.13-μm SiGe (Bi)-CMOS technology. This BPF consists of a broadside-coupled meander-line resonator (BCMLR) in conjunction with a defected-ground structure (DGS). By simply grounding a BCMLR, the resonator can be converted into a BPF. Further applying a DGS to this BPF, an additional transmission zero can be generated in the high-frequency band. To understand the fundamentals of this design, an $LC$-equivalent circuit is given for investigation of the transmission zeros and poles. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 18%. The minimum insertion loss is 2.6 dB, while the maximum stopband attenuation is 44 dB. The chip size, excluding the pads, is only 0.038 mm2 ( 0.126×0.3 mm2).
Original language | English |
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Article number | 7891020 |
Pages (from-to) | 626-629 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 38 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2017 |
Externally published | Yes |
Keywords
- Bi-CMOS
- SiGe and slow-wave structure
- broadside-coupled meander-line resonator (BCMLR)
- defected-ground structure (DGS)
- millimeter-wave