An On-Chip Bandpass Filter Using a Broadside-Coupled Meander Line Resonator with a Defected-Ground Structure

Yi Zhong, Yang Yang, Xi Zhu, Eryk Dutkiewicz, Kam Man Shum, Quan Xue*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

91 Citations (Scopus)

Abstract

An on-chip bandpass filter (BPF) is designed and fabricated in a 0.13-μm SiGe (Bi)-CMOS technology. This BPF consists of a broadside-coupled meander-line resonator (BCMLR) in conjunction with a defected-ground structure (DGS). By simply grounding a BCMLR, the resonator can be converted into a BPF. Further applying a DGS to this BPF, an additional transmission zero can be generated in the high-frequency band. To understand the fundamentals of this design, an $LC$-equivalent circuit is given for investigation of the transmission zeros and poles. The measured results show that the BPF has a center frequency at 33 GHz with a bandwidth of 18%. The minimum insertion loss is 2.6 dB, while the maximum stopband attenuation is 44 dB. The chip size, excluding the pads, is only 0.038 mm2 ( 0.126×0.3 mm2).

Original languageEnglish
Article number7891020
Pages (from-to)626-629
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number5
DOIs
Publication statusPublished - May 2017
Externally publishedYes

Keywords

  • Bi-CMOS
  • SiGe and slow-wave structure
  • broadside-coupled meander-line resonator (BCMLR)
  • defected-ground structure (DGS)
  • millimeter-wave

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