An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

Hongzhi Sun; Fares Maarouf; Deyou Fang; Kemiao Jia; Huikai Xie

doi:10.1109/NEMS.2008.4484505

An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

Hongzhi Sun^*, Fares Maarouf, Deyou Fang, Kemiao Jia, Huikai Xie

^*Corresponding author for this work

University of Florida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 ^-3/°C to m × 10^-4°C.

Original language	English
Title of host publication	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
Pages	1075-1080
Number of pages	6
DOIs	https://doi.org/10.1109/NEMS.2008.4484505
Publication status	Published - 2008
Externally published	Yes
Event	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 - Sanya, China Duration: 6 Jan 2008 → 9 Jan 2008

Publication series

Name	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

Conference

Conference	3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
Country/Territory	China
City	Sanya
Period	6/01/08 → 9/01/08

Keywords

CMOS-MEMS accelerometer
Dual-chopper amplifier
Low noise
Low power
Three-axis accelerometer

Access to Document

10.1109/NEMS.2008.4484505

Cite this

Sun, H., Maarouf, F., Fang, D., Jia, K., & Xie, H. (2008). An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. In 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 (pp. 1075-1080). Article 4484505 (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS). https://doi.org/10.1109/NEMS.2008.4484505

@inproceedings{c7a396611b514ddeb8bcf675f07769ff,

title = "An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers",

abstract = "This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 -3/°C to m × 10-4°C.",

keywords = "CMOS-MEMS accelerometer, Dual-chopper amplifier, Low noise, Low power, Three-axis accelerometer",

author = "Hongzhi Sun and Fares Maarouf and Deyou Fang and Kemiao Jia and Huikai Xie",

year = "2008",

doi = "10.1109/NEMS.2008.4484505",

language = "English",

isbn = "9781424419081",

series = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS",

pages = "1075--1080",

booktitle = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008",

note = "3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008 ; Conference date: 06-01-2008 Through 09-01-2008",

}

Sun, H, Maarouf, F, Fang, D, Jia, K & Xie, H 2008, An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. in 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008., 4484505, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS, pp. 1075-1080, 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008, Sanya, China, 6/01/08. https://doi.org/10.1109/NEMS.2008.4484505

An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. / Sun, Hongzhi; Maarouf, Fares; Fang, Deyou et al.
3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. p. 1075-1080 4484505 (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

AU - Sun, Hongzhi

AU - Maarouf, Fares

AU - Fang, Deyou

AU - Jia, Kemiao

AU - Xie, Huikai

PY - 2008

Y1 - 2008

N2 - This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 -3/°C to m × 10-4°C.

AB - This paper reports an improved low-power low-noise dual-chopper amplifier (DCA) for capacitive CMOS-MEMS accelerometers. The new DCA employs an on-chip band-gap voltage reference to reduce the number of bonding pads and the complexity of the external circuits. The temperature drifting of the first-stage gain is reduced by using PMOS instead of NMOS as an active load. A prototype DCA with a three-axis accelerometer has been fabricated using the TSMC 0.35 μm technology. The number of required bonding pads is reduced from 21 to 14, and the temperature sensitivity is reduced from 1.2 × 10 -3/°C to m × 10-4°C.

KW - CMOS-MEMS accelerometer

KW - Dual-chopper amplifier

KW - Low noise

KW - Low power

KW - Three-axis accelerometer

UR - http://www.scopus.com/inward/record.url?scp=50249167790&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2008.4484505

DO - 10.1109/NEMS.2008.4484505

M3 - Conference contribution

AN - SCOPUS:50249167790

SN - 9781424419081

T3 - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

SP - 1075

EP - 1080

BT - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008

T2 - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008

Y2 - 6 January 2008 through 9 January 2008

ER -

Sun H, Maarouf F, Fang D, Jia K, Xie H. An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers. In 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008. 2008. p. 1075-1080. 4484505. (3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS). doi: 10.1109/NEMS.2008.4484505

An improved low-power low-noise dual-chopper amplifier for capacitive CMOS-MEMS accelerometers

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this