An accurate and stable finite element method for self-heating effects simulation of semiconductor devices

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Abstract

In this paper, an accurate and stable control volume finite element method with Scharfetter-Gummel upwind effects (CVFEM-SG) has been employed to numerically simulate the self-heating effects of semiconductor devices. The thermodynamic drift-diffusion model is utilized to model the self-heating effects. The numerical experiments show that the proposed approach is accurate and robust while alleviates the requirement on the quality of the mesh compared with the traditional finite volume method.

Original languageEnglish
Title of host publicationProceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1107-1110
Number of pages4
ISBN (Electronic)9781728105635
DOIs
Publication statusPublished - Sept 2019
Event21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019 - Granada, Spain
Duration: 9 Sept 201913 Sept 2019

Publication series

NameProceedings of the 2019 21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019

Conference

Conference21st International Conference on Electromagnetics in Advanced Applications, ICEAA 2019
Country/TerritorySpain
CityGranada
Period9/09/1913/09/19

Keywords

  • CVFEM-SG
  • Self-heating effect
  • Semiconductor devices

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