A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays

Hua Wang; Minghua Sun; Kang Ding; Martin T. Hill; Cun Zheng Ning

doi:10.1021/nl2001132

A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays

Hua Wang, Minghua Sun, Kang Ding, Martin T. Hill, Cun Zheng Ning^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

Original language	English
Pages (from-to)	1646-1650
Number of pages	5
Journal	Nano Letters
Volume	11
Issue number	4
DOIs	https://doi.org/10.1021/nl2001132
Publication status	Published - 13 Apr 2011
Externally published	Yes

Keywords

Reactive ion etching
longitudinal heterostructure
photoluminescence linewidth
self-masking
semiconductor nanowires
top-down fabrication

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10.1021/nl2001132

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@article{222bdfc377df432d8983fd20a93edb1d,

title = "A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays",

abstract = "We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.",

keywords = "Reactive ion etching, longitudinal heterostructure, photoluminescence linewidth, self-masking, semiconductor nanowires, top-down fabrication",

author = "Hua Wang and Minghua Sun and Kang Ding and Hill, {Martin T.} and Ning, {Cun Zheng}",

year = "2011",

month = apr,

day = "13",

doi = "10.1021/nl2001132",

language = "English",

volume = "11",

pages = "1646--1650",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays

AU - Wang, Hua

AU - Sun, Minghua

AU - Ding, Kang

AU - Hill, Martin T.

AU - Ning, Cun Zheng

PY - 2011/4/13

Y1 - 2011/4/13

N2 - We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

AB - We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self-masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top-down, mask-free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom-up approach, significantly expanding ranges and varieties of applications of nanowire technology.

KW - Reactive ion etching

KW - longitudinal heterostructure

KW - photoluminescence linewidth

KW - self-masking

KW - semiconductor nanowires

KW - top-down fabrication

UR - http://www.scopus.com/inward/record.url?scp=79954521372&partnerID=8YFLogxK

U2 - 10.1021/nl2001132

DO - 10.1021/nl2001132

M3 - Article

C2 - 21417458

AN - SCOPUS:79954521372

SN - 1530-6984

VL - 11

SP - 1646

EP - 1650

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -

A top-down approach to fabrication of high quality vertical heterostructure nanowire arrays

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Keywords

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