A 90-120 GHz driver amplifier with 70nm InP PHEMT

Jun Liu; Weihua Yu; Xin Lv

doi:10.1109/APCAP.2017.8420777

A 90-120 GHz driver amplifier with 70nm InP PHEMT

Jun Liu, Weihua Yu, Xin Lv

School of Integrated Circuits and Electronics

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm².

Original language	English
Title of host publication	2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538616086
DOIs	https://doi.org/10.1109/APCAP.2017.8420777
Publication status	Published - 25 Jul 2018
Event	6th IEEE Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Xi'an, China Duration: 16 Oct 2017 → 19 Oct 2017

Publication series

Name	2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding

Conference

Conference	6th IEEE Asia-Pacific Conference on Antennas and Propagation, APCAP 2017
Country/Territory	China
City	Xi'an
Period	16/10/17 → 19/10/17

Access to Document

10.1109/APCAP.2017.8420777

Cite this

Liu, J., Yu, W., & Lv, X. (2018). A 90-120 GHz driver amplifier with 70nm InP PHEMT. In 2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding (pp. 1-3). Article 8420777 (2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APCAP.2017.8420777

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abstract = "This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm2.",

author = "Jun Liu and Weihua Yu and Xin Lv",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 6th IEEE Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 ; Conference date: 16-10-2017 Through 19-10-2017",

year = "2018",

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language = "English",

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Liu, J, Yu, W & Lv, X 2018, A 90-120 GHz driver amplifier with 70nm InP PHEMT. in 2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding., 8420777, 2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 6th IEEE Asia-Pacific Conference on Antennas and Propagation, APCAP 2017, Xi'an, China, 16/10/17. https://doi.org/10.1109/APCAP.2017.8420777

A 90-120 GHz driver amplifier with 70nm InP PHEMT. / Liu, Jun; Yu, Weihua; Lv, Xin.
2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3 8420777 (2017 IEEE 6th Asia-Pacific Conference on Antennas and Propagation, APCAP 2017 - Proceeding).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm2.

AB - This paper presents the design and simulation of a three-stage driver amplifier with a 70-nm InAlAs/InGaAs/InP pseudomorphic high electron-mobility transistor (PHEMT) technology. The three-stage driver amplifier is designed through schematic simulation and momentum EM co-simulation by ADS software with a 2×25 μm gate length PHEMT. The high-low pass filter structures are used for matching network, edge-coupled lines are selected to block dc voltage, radial stubs are chosen as RF ground and shunt RC networks are included in the bias circuitry to maintain amplifier stability. Ground coplanar waveguide (GCPW) structure is added in input and output port. The three-stage driver amplifier provides more than 18dB linear gain between 90 and 120GHz, a P-1dB at the output of 7dBm, more than 10dBm saturated output power at 110GHz, consumes 58.9mW and the size is about 2.3×1.1 mm2.

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A 90-120 GHz driver amplifier with 70nm InP PHEMT

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