Abstract
In this paper,a wide band cascode power amplifier working at 33~170 GHz is designed,based on the 500 nm InP dual-heterojunction bipolar transistor(DHBT)process. Two pairs of parallel input and output stub lines can effectively expand the working bandwidth. The output coupling line compensates the high frequency transmission. The measured results show that the maximum gain of the amplifier is 11. 98 dB at 115 GHz,the rel⁃ ative bandwidth is 134. 98 %,the gain flatness is ±2 dB,the gain is better than 10 dB and the output power is bet⁃ ter than 1 dBm in the operating bandwidth.
Translated title of the contribution | 基于 InP DHBT 工艺的 33~170 GHz 共源共栅放大器 |
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Original language | English |
Pages (from-to) | 197-200 |
Number of pages | 4 |
Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
Volume | 42 |
Issue number | 2 |
DOIs | |
Publication status | Published - Apr 2023 |
Keywords
- InP dual-heterojunction bipolar transistor(InP DHBT)
- cascode amplifiers
- monolithic microwave integrated circuit (MMIC)
- wide band