A 33~170 GHz cascode amplifier based on InP DHBT technology

Bo Wu Wang, Wei Hua Yu, Yan Fei Hou, Qin Yu, Yan Sun, Wei Cheng, Ming Zhou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper,a wide band cascode power amplifier working at 33~170 GHz is designed,based on the 500 nm InP dual-heterojunction bipolar transistor(DHBT)process. Two pairs of parallel input and output stub lines can effectively expand the working bandwidth. The output coupling line compensates the high frequency transmission. The measured results show that the maximum gain of the amplifier is 11. 98 dB at 115 GHz,the rel⁃ ative bandwidth is 134. 98 %,the gain flatness is ±2 dB,the gain is better than 10 dB and the output power is bet⁃ ter than 1 dBm in the operating bandwidth.

Translated title of the contribution基于 InP DHBT 工艺的 33~170 GHz 共源共栅放大器
Original languageEnglish
Pages (from-to)197-200
Number of pages4
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume42
Issue number2
DOIs
Publication statusPublished - Apr 2023

Keywords

  • InP dual-heterojunction bipolar transistor(InP DHBT)
  • cascode amplifiers
  • monolithic microwave integrated circuit (MMIC)
  • wide band

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