34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC

Yiyang Yuan, Yiming Yang, Xinghua Wang*, Xiaoran Li, Cailian Ma, Qirui Chen, Meini Tang, Xi Wei, Zhixian Hou, Jialiang Zhu, Hao Wu, Qirui Ren, Guozhong Xing, Pui In Mak, Feng Zhang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

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