Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

Heon Ham; Guozhen Shen; Jung Hee Cho; Tae Jae Lee; Sung Ho Seo; Cheol Jin Lee

doi:10.1016/j.cplett.2005.01.084

Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

Heon Ham, Guozhen Shen^*, Jung Hee Cho, Tae Jae Lee, Sung Ho Seo, Cheol Jin Lee

^*此作品的通讯作者

Hanyang University

科研成果: 期刊稿件 › 文章 › 同行评审

127 引用（Scopus）

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Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm², and the emission current density reached 1 mA/cm ² at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.

源语言	英语
页（从-至）	69-73
页数	5
期刊	Chemical Physics Letters
卷	404
期	1-3
DOI	https://doi.org/10.1016/j.cplett.2005.01.084
出版状态	已出版 - 7 3月 2005
已对外发布	是

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Ham, H., Shen, G., Cho, J. H., Lee, T. J., Seo, S. H., & Lee, C. J. (2005). Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties. Chemical Physics Letters, 404(1-3), 69-73. https://doi.org/10.1016/j.cplett.2005.01.084

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abstract = "Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.",

author = "Heon Ham and Guozhen Shen and Cho, {Jung Hee} and Lee, {Tae Jae} and Seo, {Sung Ho} and Lee, {Cheol Jin}",

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AU - Shen, Guozhen

AU - Cho, Jung Hee

AU - Lee, Tae Jae

AU - Seo, Sung Ho

AU - Lee, Cheol Jin

PY - 2005/3/7

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N2 - Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.

AB - Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.

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Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

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