TY - JOUR
T1 - Ultracompact and Unidirectional On-Chip Light Source Based on Epsilon-Near-Zero Materials in an Optical Communication Range
AU - Wu, You
AU - Hu, Xiaoyong
AU - Wang, Feifan
AU - Yang, Jinghuan
AU - Lu, Cuicui
AU - Liu, Yong Chun
AU - Yang, Hong
AU - Gong, Qihuang
N1 - Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/11/8
Y1 - 2019/11/8
N2 - An on-chip light source is one of the essential components for integrated photonic circuits and quantum-information processing chips. To date, it has been a great challenge to construct an on-chip light source with high directionality, high collection efficiency, and ultrasmall feature size simultaneously in the optical communication range. Here, an on-chip light source, consisting of a circular paraboloid etched in an aluminum-doped zinc-oxide film, which is an epsilon-near-zero material, is experimentally realized at 1550 nm. Photons emitted from the a PbS quantum-dot cluster placed near the focal point of this paraboloid are reflected into a directional parallel beam due to the large impedance mismatch between aluminum-doped zinc oxide and ambient medium. An ultrasmall emission divergence angle of only ±3â, and an ultrahigh directional emission contrast ratio of 44 dB are achieved from the ultracompact device with a feature size of only 1.5μm. Also, an ultrahigh collection efficiency of up to 92% is predicted by simulation. This work not only opens an alternative way for the realization of integrated photonic devices based on epsilon-near-zero materials, but also provides another method for the precise assembling of composite functional nanostructures.
AB - An on-chip light source is one of the essential components for integrated photonic circuits and quantum-information processing chips. To date, it has been a great challenge to construct an on-chip light source with high directionality, high collection efficiency, and ultrasmall feature size simultaneously in the optical communication range. Here, an on-chip light source, consisting of a circular paraboloid etched in an aluminum-doped zinc-oxide film, which is an epsilon-near-zero material, is experimentally realized at 1550 nm. Photons emitted from the a PbS quantum-dot cluster placed near the focal point of this paraboloid are reflected into a directional parallel beam due to the large impedance mismatch between aluminum-doped zinc oxide and ambient medium. An ultrasmall emission divergence angle of only ±3â, and an ultrahigh directional emission contrast ratio of 44 dB are achieved from the ultracompact device with a feature size of only 1.5μm. Also, an ultrahigh collection efficiency of up to 92% is predicted by simulation. This work not only opens an alternative way for the realization of integrated photonic devices based on epsilon-near-zero materials, but also provides another method for the precise assembling of composite functional nanostructures.
UR - http://www.scopus.com/inward/record.url?scp=85075156138&partnerID=8YFLogxK
U2 - 10.1103/PhysRevApplied.12.054021
DO - 10.1103/PhysRevApplied.12.054021
M3 - Article
AN - SCOPUS:85075156138
SN - 2331-7019
VL - 12
JO - Physical Review Applied
JF - Physical Review Applied
IS - 5
M1 - 054021
ER -