Two-stage distributed amplifier from 2.9 GHz to 10.6 GHz in CMOS technology

Xing Hua Wang; Xiao Li; Tong Li; Lei Zhang; Qian Zhang; Shun An Zhong

Two-stage distributed amplifier from 2.9 GHz to 10.6 GHz in CMOS technology

Xing Hua Wang, Xiao Li, Tong Li, Lei Zhang^*, Qian Zhang, Shun An Zhong

^*此作品的通讯作者

集成电路与电子学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

This paper proposes a distributed amplifier which can be applied to ultra wide-band (UWB) wireless communication systems. The distributed amplifier can realize the bandwidth extension by using artificial transmission line formed by inductors to absorb parasitic capacitances of the transistors. Benefiting from the wealth of distributed theory, the proposed low noise amplifier (LNA) not only extends its bandwidth but also maintain a low noise figure during operation wideband. This circuit has been designed under TSMC RF 0.18 μm 1P6M process with 1.8 V supply, and the power consumption is 104 mW. Simulation results show that the designed LNA has a flat gain of 18.7 dB from 2.9 GHz to 10.6 GHz with less than 0.9 dB ripple and its minimum noise figure (NF) is only 1.80 dB.

源语言	英语
页（从-至）	729-731+740
期刊	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
卷	33
期	7
出版状态	已出版 - 7月 2013

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{202c3f6a667a4b2a84fdbbf5e75a33b8,

title = "Two-stage distributed amplifier from 2.9 GHz to 10.6 GHz in CMOS technology",

abstract = "This paper proposes a distributed amplifier which can be applied to ultra wide-band (UWB) wireless communication systems. The distributed amplifier can realize the bandwidth extension by using artificial transmission line formed by inductors to absorb parasitic capacitances of the transistors. Benefiting from the wealth of distributed theory, the proposed low noise amplifier (LNA) not only extends its bandwidth but also maintain a low noise figure during operation wideband. This circuit has been designed under TSMC RF 0.18 μm 1P6M process with 1.8 V supply, and the power consumption is 104 mW. Simulation results show that the designed LNA has a flat gain of 18.7 dB from 2.9 GHz to 10.6 GHz with less than 0.9 dB ripple and its minimum noise figure (NF) is only 1.80 dB.",

keywords = "CMOS technology, Distributed amplifier, Low noise, Ultra-wideband",

author = "Wang, {Xing Hua} and Xiao Li and Tong Li and Lei Zhang and Qian Zhang and Zhong, {Shun An}",

year = "2013",

month = jul,

language = "English",

volume = "33",

pages = "729--731+740",

journal = "Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology",

issn = "1001-0645",

publisher = "Beijing Institute of Technology",

number = "7",

}

TY - JOUR

T1 - Two-stage distributed amplifier from 2.9 GHz to 10.6 GHz in CMOS technology

AU - Wang, Xing Hua

AU - Li, Xiao

AU - Li, Tong

AU - Zhang, Lei

AU - Zhang, Qian

AU - Zhong, Shun An

PY - 2013/7

Y1 - 2013/7

N2 - This paper proposes a distributed amplifier which can be applied to ultra wide-band (UWB) wireless communication systems. The distributed amplifier can realize the bandwidth extension by using artificial transmission line formed by inductors to absorb parasitic capacitances of the transistors. Benefiting from the wealth of distributed theory, the proposed low noise amplifier (LNA) not only extends its bandwidth but also maintain a low noise figure during operation wideband. This circuit has been designed under TSMC RF 0.18 μm 1P6M process with 1.8 V supply, and the power consumption is 104 mW. Simulation results show that the designed LNA has a flat gain of 18.7 dB from 2.9 GHz to 10.6 GHz with less than 0.9 dB ripple and its minimum noise figure (NF) is only 1.80 dB.

AB - This paper proposes a distributed amplifier which can be applied to ultra wide-band (UWB) wireless communication systems. The distributed amplifier can realize the bandwidth extension by using artificial transmission line formed by inductors to absorb parasitic capacitances of the transistors. Benefiting from the wealth of distributed theory, the proposed low noise amplifier (LNA) not only extends its bandwidth but also maintain a low noise figure during operation wideband. This circuit has been designed under TSMC RF 0.18 μm 1P6M process with 1.8 V supply, and the power consumption is 104 mW. Simulation results show that the designed LNA has a flat gain of 18.7 dB from 2.9 GHz to 10.6 GHz with less than 0.9 dB ripple and its minimum noise figure (NF) is only 1.80 dB.

KW - CMOS technology

KW - Distributed amplifier

KW - Low noise

KW - Ultra-wideband

UR - http://www.scopus.com/inward/record.url?scp=84883479665&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84883479665

SN - 1001-0645

VL - 33

SP - 729-731+740

JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 7

ER -

Two-stage distributed amplifier from 2.9 GHz to 10.6 GHz in CMOS technology

摘要

其它文件与链接

指纹

引用此