TY - JOUR
T1 - Two Bulk-Heterojunctions Made of Blended Hybrid Nanocomposites for High-Performance Broadband, Self-Driven Photodetectors
AU - Sulaman, Muhammad
AU - Yang, Shengyi
AU - Imran, Ali
AU - Zhang, Zhenheng
AU - Bukhtiar, Arfan
AU - Ge, Zhenhua
AU - Song, Yong
AU - Sun, Feiyang
AU - Jiang, Yurong
AU - Tang, Libin
AU - Zou, Bingsuo
N1 - Publisher Copyright:
© 2023 American Chemical Society.
PY - 2023/5/31
Y1 - 2023/5/31
N2 - Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality semiconducting nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, p-n bulk-heterojunctions (BHJs) based photodetectors have shown high detectivity because of the suppressed dark current and high photocurrent, which are due to the larger built-in electric potential within the depletion region and can significantly improve the quantum efficiency by reducing the carriers’ recombination. In this work, PbSe quantum dots (QDs) blended with ZnO nanocrystals (NCs) were used as the n-type layer, while CsPbBr3 NCs doped with P3HT were used as the p-type layer; as a result, a p-n BHJ was formed with a strong built-in electric field. Consequently, such a kind of p-n BHJ photodetector ITO/ZnO/PbSe:ZnO/CsPbBr3:P3HT/P3HT/Au showed a high ON/OFF current ratio of 105 with a photoresponsivity of 1.4 A/W and specific detectivity of 6.59 × 1014 Jones under 0.1 mW/cm2 532 nm illumination in self-driven mode. Moreover, the simulation performed by TCAD also agrees well with our experimental results, and the underlying physical mechanism for enhanced performance is discussed in detail for this type of p-n BHJ photodetector.
AB - Heterojunctions based on low dimensional semiconducting materials are one of the most promising alternatives for next-generation optoelectronic devices. By choosing different dopants in high-quality semiconducting nanomaterials, p-n junctions can be realized with tailored energy band alignments. Also, p-n bulk-heterojunctions (BHJs) based photodetectors have shown high detectivity because of the suppressed dark current and high photocurrent, which are due to the larger built-in electric potential within the depletion region and can significantly improve the quantum efficiency by reducing the carriers’ recombination. In this work, PbSe quantum dots (QDs) blended with ZnO nanocrystals (NCs) were used as the n-type layer, while CsPbBr3 NCs doped with P3HT were used as the p-type layer; as a result, a p-n BHJ was formed with a strong built-in electric field. Consequently, such a kind of p-n BHJ photodetector ITO/ZnO/PbSe:ZnO/CsPbBr3:P3HT/P3HT/Au showed a high ON/OFF current ratio of 105 with a photoresponsivity of 1.4 A/W and specific detectivity of 6.59 × 1014 Jones under 0.1 mW/cm2 532 nm illumination in self-driven mode. Moreover, the simulation performed by TCAD also agrees well with our experimental results, and the underlying physical mechanism for enhanced performance is discussed in detail for this type of p-n BHJ photodetector.
KW - PbSe colloidal quantum dots (CQDs)
KW - broadband
KW - p-n bulk-heterojunctions (BHJs)
KW - perovskite nanocrystals
KW - self-driven photodetector
UR - http://www.scopus.com/inward/record.url?scp=85160631709&partnerID=8YFLogxK
U2 - 10.1021/acsami.3c01749
DO - 10.1021/acsami.3c01749
M3 - Article
C2 - 37202884
AN - SCOPUS:85160631709
SN - 1944-8244
VL - 15
SP - 25671
EP - 25683
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 21
ER -