Tunable single frequency microchip Nd:YAP MOPA laser operating at 1.08 μm

A longitudinally laser diode (LD)-pumped Nd:YAP microchip master oscillator power amplifier (MOPA) system operating at 1.08 μm was demonstrated. The system consisted of a longitudinally LD-pumped monolithic Nd:YAP microchip master laser and a two-stage disc amplifier. The cavity length of the master oscillator was 500 μm. The short cavity length lead to a large frequency separation between the resonator modes and hence single longitudinal mode operation was achieved. Pumped by a high-brightness LD an output power of 155 mW in both single longitudinal and transverse mode was generated. To scale to a high power, the output power from the master oscillator was amplified by amplifier discs. The amplified output power was 1.43 W. The central wavelength of the laser system was tuned by changing the cavity length and refractive index via temperature. Using a shorter master oscillator (L = 310 μm) a continuous output wavelength tuning over the gain profile of 0.9 nm was realized. To our knowledge this is the first study of a MOPA system based on an LD-pumped microchip Nd:YAP laser.