Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

R. B. Liu; X. J. Zhuang; J. Y. Xu; D. B. Li; Q. L. Zhang; K. Ding; P. B. He; C. Z. Ning; B. S. Zou; A. L. Pan

doi:10.1063/1.3672032

Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

R. B. Liu^*, X. J. Zhuang, J. Y. Xu, D. B. Li, Q. L. Zhang, K. Ding, P. B. He, C. Z. Ning, B. S. Zou, A. L. Pan

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

28 引用（Scopus）

摘要

High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.

源语言	英语
文章编号	263101
期刊	Applied Physics Letters
卷	99
期	26
DOI	https://doi.org/10.1063/1.3672032
出版状态	已出版 - 26 12月 2011

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title = "Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers",

abstract = "High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.",

author = "Liu, {R. B.} and Zhuang, {X. J.} and Xu, {J. Y.} and Li, {D. B.} and Zhang, {Q. L.} and K. Ding and He, {P. B.} and Ning, {C. Z.} and Zou, {B. S.} and Pan, {A. L.}",

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AU - Liu, R. B.

AU - Zhuang, X. J.

AU - Xu, J. Y.

AU - Li, D. B.

AU - Zhang, Q. L.

AU - Ding, K.

AU - He, P. B.

AU - Ning, C. Z.

AU - Zou, B. S.

AU - Pan, A. L.

PY - 2011/12/26

Y1 - 2011/12/26

N2 - High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.

AB - High-quality surface tin-doped hexagonal CdS whiskers were synthesized by a well-controlled in situ source exchange chemical vapor deposition route. Under local light excitation, the detected microphotoluminescence from any positions along the length of these whiskers exhibits strong and multi-mode trap-state whispering-gallery (WG) mode emission. With elevating the pumping power, some of these WG modes start lasing at an ultra-low threshold, with lasing wavelength covering a broad range from ∼540 to ∼750 nm. Calculations using a plane-wave model of WG modes show that all these trap-state lasing modes are transverse magnetic polarized, which was well explained by a two-dimensional finite element simulation. The surface doped semiconductor structures have potential applications as low-threshold tunable micro/nanoscale lasers in optical storage, lighting, and optical communications.

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Trap-state whispering-gallery mode lasing from high-quality tin-doped CdS whiskers

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