TY - JOUR
T1 - Transparent and conductive IZO films
T2 - Oxygen and discharge voltage controlled sputtering growth and properties
AU - lei, Pei
AU - Chen, Xiaoting
AU - yan, Yue
AU - Peng, Jingjing
AU - Hao, Changshan
AU - Ji, Jianchao
AU - Huo, Zhongqi
N1 - Publisher Copyright:
© 2021
PY - 2022/1
Y1 - 2022/1
N2 - Zinc-doped indium oxide (IZO) film, as an important transparent conductive oxide, has attracted increasing attention in various scientific and engineering areas. In the present work, discharge-voltage and reactive-oxygen controlled IZO films were grown by magnetron sputtering and studied systematically. The microstructure, element distribution and chemical bonding of IZO films were investigated by X-Ray diffraction (XRD), transmission electron microscope (TEM), Energy Dispersive X-Ray Spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). The optical and electrical properties of IZO films were studied by controlled oxygen and discharge voltage. The typical microstructure of IZO films with optimal optical and electric properties has been characterized. High discharge voltage and matched oxygen vacancies could promote the low resistivity of IZO films, which could be determined by the electronic concentration and mobility.
AB - Zinc-doped indium oxide (IZO) film, as an important transparent conductive oxide, has attracted increasing attention in various scientific and engineering areas. In the present work, discharge-voltage and reactive-oxygen controlled IZO films were grown by magnetron sputtering and studied systematically. The microstructure, element distribution and chemical bonding of IZO films were investigated by X-Ray diffraction (XRD), transmission electron microscope (TEM), Energy Dispersive X-Ray Spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS). The optical and electrical properties of IZO films were studied by controlled oxygen and discharge voltage. The typical microstructure of IZO films with optimal optical and electric properties has been characterized. High discharge voltage and matched oxygen vacancies could promote the low resistivity of IZO films, which could be determined by the electronic concentration and mobility.
KW - Electrical properties
KW - IZO films
KW - Magnetron sputtering
KW - Optical properties
UR - http://www.scopus.com/inward/record.url?scp=85116741872&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2021.110645
DO - 10.1016/j.vacuum.2021.110645
M3 - Article
AN - SCOPUS:85116741872
SN - 0042-207X
VL - 195
JO - Vacuum
JF - Vacuum
M1 - 110645
ER -