Threshold-Switching Memristors for Neuromorphic Thermoreception

Neuromorphic devices emulating the temperature-sensing capabilities of biological thermoreceptors hold significant promise for neuron-like artificial sensory systems. In this work, Bi₂Se₃-based threshold-switching memristors were presented in constructing temperature-sensing neuron circuits, leveraging its exceptional attributes, such as high switching ratio (>10⁶), low threshold voltage, and thermoelectric response. The spiking oscillation response of the devices to resistance and temperature variations was analyzed using Hspice simulation of the memristor model based on its resistance in on/off states, threshold voltage (V_th), and hold voltage (V_hold). These results show the great potential of the Bi₂Se₃-based memristor in enabling biorealistic thermoreception applications.