The use of AFM in assessing the crack resistance of silicon wafers of various orientations

Vasilina A. Lapitskaya; Tatyana A. Kuznetsova; Anastasiya V. Khabarava; Sergei A. Chizhik; Sergei M. Aizikovich; Evgeniy V. Sadyrin; Boris I. Mitrin; Weifu Sun

doi:10.1016/j.engfracmech.2021.107926

The use of AFM in assessing the crack resistance of silicon wafers of various orientations

Vasilina A. Lapitskaya, Tatyana A. Kuznetsova, Anastasiya V. Khabarava, Sergei A. Chizhik, Sergei M. Aizikovich, Evgeniy V. Sadyrin^*, Boris I. Mitrin, Weifu Sun

^*此作品的通讯作者

机电学院

科研成果: 期刊稿件 › 文章 › 同行评审

7 引用（Scopus）

摘要

Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor K_IC and fracture energy G_IC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of K_IC and G_IC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.

源语言	英语
文章编号	107926
期刊	Engineering Fracture Mechanics
卷	259
DOI	https://doi.org/10.1016/j.engfracmech.2021.107926
出版状态	已出版 - 1月 2022

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10.1016/j.engfracmech.2021.107926

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@article{7be81ca518174d5f9e81cfc6d22c4dd2,

title = "The use of AFM in assessing the crack resistance of silicon wafers of various orientations",

abstract = "Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor KIC and fracture energy GIC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of KIC and GIC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.",

keywords = "Atomic force microscopy, Crack, Fracture energy, Fracture toughness, Orientation, Silicon, Specific surface energy, Surface damage",

author = "Lapitskaya, {Vasilina A.} and Kuznetsova, {Tatyana A.} and Khabarava, {Anastasiya V.} and Chizhik, {Sergei A.} and Aizikovich, {Sergei M.} and Sadyrin, {Evgeniy V.} and Mitrin, {Boris I.} and Weifu Sun",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2022",

month = jan,

doi = "10.1016/j.engfracmech.2021.107926",

language = "English",

volume = "259",

journal = "Engineering Fracture Mechanics",

issn = "0013-7944",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - The use of AFM in assessing the crack resistance of silicon wafers of various orientations

AU - Lapitskaya, Vasilina A.

AU - Kuznetsova, Tatyana A.

AU - Khabarava, Anastasiya V.

AU - Chizhik, Sergei A.

AU - Aizikovich, Sergei M.

AU - Sadyrin, Evgeniy V.

AU - Mitrin, Boris I.

AU - Sun, Weifu

PY - 2022/1

Y1 - 2022/1

N2 - Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor KIC and fracture energy GIC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of KIC and GIC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.

AB - Crack resistance of silicon wafers plays a vital role in development of MEMS technologies containing beam elements. In the present research, this characteristic was determined using the Vickers tip indentation method. The critical stress intensity factor KIC and fracture energy GIC of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) crystallographic orientations were evaluated. The measurements were supplemented by imaging of indents using atomic force microscopy (AFM). The correlation of these parameters with the specific surface energy, Young's modulus E and microhardness H was conducted. The values of E and H were evaluated by nanoindentation. The dependences of KIC and GIC on the load of silicon wafers of (1 0 0), (1 1 0), and (1 1 1) orientations were obtained.

KW - Atomic force microscopy

KW - Crack

KW - Fracture energy

KW - Fracture toughness

KW - Orientation

KW - Silicon

KW - Specific surface energy

KW - Surface damage

UR - http://www.scopus.com/inward/record.url?scp=85120902002&partnerID=8YFLogxK

U2 - 10.1016/j.engfracmech.2021.107926

DO - 10.1016/j.engfracmech.2021.107926

M3 - Article

AN - SCOPUS:85120902002

SN - 0013-7944

VL - 259

JO - Engineering Fracture Mechanics

JF - Engineering Fracture Mechanics

M1 - 107926

ER -

The use of AFM in assessing the crack resistance of silicon wafers of various orientations

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