The stitching error dependence of the resist pattern accuracy for electron beam projection lithography

Yanqiu Li; Atsushi Yamada

doi:10.1016/j.mee.2003.09.008

The stitching error dependence of the resist pattern accuracy for electron beam projection lithography

Yanqiu Li^*, Atsushi Yamada

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The stitching error dependence of the resist pattern accuracy for electron beam projection lithography is presented. The terrace pair is employed to divide the pattern in order to control the uniformity of critical dimension (CD) within large stitching margin. The model of electron scatting is supposed in the simulation. The results show that the CD and pattern displacement are within budget if the overlapping and transverse shifting of pattern are controlled within ±20 and ±30 nm, respectively, for 100 nm node generation.

源语言	英语
页（从-至）	163-170
页数	8
期刊	Microelectronic Engineering
卷	71
期	2
DOI	https://doi.org/10.1016/j.mee.2003.09.008
出版状态	已出版 - 2月 2004
已对外发布	是

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title = "The stitching error dependence of the resist pattern accuracy for electron beam projection lithography",

abstract = "The stitching error dependence of the resist pattern accuracy for electron beam projection lithography is presented. The terrace pair is employed to divide the pattern in order to control the uniformity of critical dimension (CD) within large stitching margin. The model of electron scatting is supposed in the simulation. The results show that the CD and pattern displacement are within budget if the overlapping and transverse shifting of pattern are controlled within ±20 and ±30 nm, respectively, for 100 nm node generation.",

keywords = "Electron beam lithography, Microelectronic, Nanostructures, Stitching error",

author = "Yanqiu Li and Atsushi Yamada",

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AB - The stitching error dependence of the resist pattern accuracy for electron beam projection lithography is presented. The terrace pair is employed to divide the pattern in order to control the uniformity of critical dimension (CD) within large stitching margin. The model of electron scatting is supposed in the simulation. The results show that the CD and pattern displacement are within budget if the overlapping and transverse shifting of pattern are controlled within ±20 and ±30 nm, respectively, for 100 nm node generation.

KW - Electron beam lithography

KW - Microelectronic

KW - Nanostructures

KW - Stitching error

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The stitching error dependence of the resist pattern accuracy for electron beam projection lithography

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