The Self-Catalyzed Growth of GaAsSb Nanowires on a Si (111) Substrate Using Molecular-Beam Epitaxy

GaAsSb semiconductor material, a ternary alloy, has long been recognized as a crucial semiconductor in the near infrared range due to its ability to finely adjust the wavelength through controlling the Sb component. In this work, we report on the pattern of orientation variation in self-catalyzed grown GaAsSb nanowires (NWs). Utilizing solid-source molecular-beam epitaxy (MBE), self-catalyzed GaAs and GaAsSb nanowires (NWs) were grown on Si (111) substrates. The influence of various Sb components on the growth direction of the nanowires in the ternary GaAsSb alloy was examined using scanning electron microscopy (SEM). The inclusion of Sb components was discovered to alter the growth direction of the nanowires, transitioning them from a vertical and inclined orientation to a configuration that encompassed vertical, inclined, and parallel orientations with respect to the Si (111) substrate. As the Sb component in GaAsSb increased, there was an increased likelihood of the nanowires growing parallel to the surface of the Si (111) substrate. A combination of X-ray diffraction (XRD) and Raman spectroscopy validated the presence of Sb components and indicated a high crystalline quality. Additionally, XRD confirmed that the Sb components aligned with the intended structure. These findings establish a solid material foundation for the development of high-performance GaAsSb-based devices.