The preparation of AZO films with RF sputtering

Zhinong Yu; Jin Xu; We Xue; Xia Li; Jinwei Li

doi:10.1117/12.791173

The preparation of AZO films with RF sputtering

Zhinong Yu^*, Jin Xu, We Xue, Xia Li, Jinwei Li

^*此作品的通讯作者

光电学院

Beijing Institute of Technology

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al ₂O₃ (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10 ^-3 Ω ·cm.

源语言	英语
主期刊名	International Symposium on Photoelectronic Detection and Imaging 2007
主期刊副标题	Optoelectronic System Design, Manufacturing, and Testing
DOI	https://doi.org/10.1117/12.791173
出版状态	已出版 - 2008
活动	International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings - Beijing, 中国期限: 9 9月 2007 → 12 9月 2007

出版系列

姓名	Proceedings of SPIE - The International Society for Optical Engineering
卷	6624
ISSN（印刷版）	0277-786X

会议

会议	International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings
国家/地区	中国
市	Beijing
时期	9/09/07 → 12/09/07

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Yu, Z., Xu, J., Xue, W., Li, X., & Li, J. (2008). The preparation of AZO films with RF sputtering. 在 International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing 文章 66241O (Proceedings of SPIE - The International Society for Optical Engineering; 卷 6624). https://doi.org/10.1117/12.791173

@inproceedings{091d30bc8f1447e4bc1605016315d007,

title = "The preparation of AZO films with RF sputtering",

abstract = "ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al 2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10 -3 Ω ·cm.",

keywords = "AZO thin film, Optical and electrical properties, RF magnetron sputtering",

author = "Zhinong Yu and Jin Xu and We Xue and Xia Li and Jinwei Li",

year = "2008",

doi = "10.1117/12.791173",

language = "English",

isbn = "9780819467669",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "International Symposium on Photoelectronic Detection and Imaging 2007",

note = "International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings ; Conference date: 09-09-2007 Through 12-09-2007",

}

Yu, Z, Xu, J, Xue, W, Li, X & Li, J 2008, The preparation of AZO films with RF sputtering. 在 International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing., 66241O, Proceedings of SPIE - The International Society for Optical Engineering, 卷 6624, International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, Beijing, 中国, 9/09/07. https://doi.org/10.1117/12.791173

The preparation of AZO films with RF sputtering. / Yu, Zhinong; Xu, Jin; Xue, We 等.
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing. 2008. 66241O (Proceedings of SPIE - The International Society for Optical Engineering; 卷 6624).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - The preparation of AZO films with RF sputtering

AU - Yu, Zhinong

AU - Xu, Jin

AU - Xue, We

AU - Li, Xia

AU - Li, Jinwei

PY - 2008

Y1 - 2008

N2 - ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al 2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10 -3 Ω ·cm.

AB - ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region. Using ZnO mixed with Al 2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure, substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is 400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum sheet resistance in 3.36 × 10 -3 Ω ·cm.

KW - AZO thin film

KW - Optical and electrical properties

KW - RF magnetron sputtering

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U2 - 10.1117/12.791173

DO - 10.1117/12.791173

M3 - Conference contribution

AN - SCOPUS:41149118083

SN - 9780819467669

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - International Symposium on Photoelectronic Detection and Imaging 2007

T2 - International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings

Y2 - 9 September 2007 through 12 September 2007

ER -

The preparation of AZO films with RF sputtering

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