The effects of process parameters on the properties of ITO films grown by ion beam-assisted deposition using 90In-10Sn (wt%) alloy

Zhinong Yu*, Longfeng Xiang, We Xue, Huaqing Wang, Weiqiang Lu

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

ITO films have been grown by ion beam-assisted deposition (IBAD) using 90In-10Sn (wt%) alloy. The electrical and optical properties of these films have been investigated as a function of oxygen flux, evaporation rate, ion energy and substrate temperature during deposition. The films with resistivity as low as 2.4 × 10-3 Ω · cm (at room temperature) and 8× 0-4Ω · cm (at 150°C) have been deposited, and the transmittance of all samples in the visible range is above 82%. The deposited films at room temperature are polycrystalline with a preferred orientation of (222) and the size of crystal particle is about 21nm, and the surface roughness for the ITO films grown at room temperature is Ra=5.32nm.

源语言英语
主期刊名International Symposium on Photoelectronic Detection and Imaging 2007
主期刊副标题Optoelectronic System Design, Manufacturing, and Testing
DOI
出版状态已出版 - 2008
活动International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings - Beijing, 中国
期限: 9 9月 200712 9月 2007

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
6624
ISSN(印刷版)0277-786X

会议

会议International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings
国家/地区中国
Beijing
时期9/09/0712/09/07

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