TY - JOUR
T1 - The crystallization and electrical properties of lead-based ferroelectric thin films for uncooled pyroelectric infrared detector
AU - Shaobo, Liu
AU - Yanqiu, Li
PY - 2004/8
Y1 - 2004/8
N2 - Epitaxially grown and polycrystalline PT, PLT and PZT thin films with thickness from 1 to 2 μm have been prepared on Pt/Ti/SiO2/Si substrates by means of the modified sol-gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT and PLT thin films are 2.9 × 10-8 C/cm2 k and (3.37-5.25) × 10-8 C/cm2 k, respectively. The figures of merit for voltage responsivity of PT and PLT thin films (Fl) are 0.60 × 10-10 Ccm/J and (0.79-1.13) × 10-8 Ccm/J, respectively. The figures of merit for current responsivity of these films are 9.0 × 10-9 Ccm/J and (10.5-16.0) × 10-9 Ccm/J, and the figures of merit for detectivity of these films are 0.74 × 10-8 Ccm/J and (0.79-1.13) × 10-8 Ccm/J, respectively.
AB - Epitaxially grown and polycrystalline PT, PLT and PZT thin films with thickness from 1 to 2 μm have been prepared on Pt/Ti/SiO2/Si substrates by means of the modified sol-gel spin-coating technique. The ferroelectric thin films have good crystallization behavior, excellent dielectric and pyroelectric properties. The pyroelectric coefficients of PT and PLT thin films are 2.9 × 10-8 C/cm2 k and (3.37-5.25) × 10-8 C/cm2 k, respectively. The figures of merit for voltage responsivity of PT and PLT thin films (Fl) are 0.60 × 10-10 Ccm/J and (0.79-1.13) × 10-8 Ccm/J, respectively. The figures of merit for current responsivity of these films are 9.0 × 10-9 Ccm/J and (10.5-16.0) × 10-9 Ccm/J, and the figures of merit for detectivity of these films are 0.74 × 10-8 Ccm/J and (0.79-1.13) × 10-8 Ccm/J, respectively.
UR - http://www.scopus.com/inward/record.url?scp=3142759337&partnerID=8YFLogxK
U2 - 10.1023/B:JMSE.0000032589.12281.c2
DO - 10.1023/B:JMSE.0000032589.12281.c2
M3 - Article
AN - SCOPUS:3142759337
SN - 0957-4522
VL - 15
SP - 545
EP - 548
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 8
ER -