摘要
The controllable synthesis route of Co doped GaN nanowires was developed and the structural and magnetic properties of Co doped GaN nanowires were studied. The results indicate that Co atoms substitute Ga sites in GaN lattice, suggesting the intrinsic nature of ferromagentism at room temperature.
源语言 | 英语 |
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文章编号 | 232404 |
期刊 | Applied Physics Letters |
卷 | 100 |
期 | 23 |
DOI | |
出版状态 | 已出版 - 4 6月 2012 |