Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

G. Feng; H. C. Wu; J. F. Feng; J. M.D. Coey

doi:10.1063/1.3614000

Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

G. Feng^*, H. C. Wu, J. F. Feng, J. M.D. Coey

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

12 引用（Scopus）

摘要

We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlO_x barriers and (Co/Pt)₃ multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)₃ stacks. The different temperature dependence of two (Co/Pt)₃ stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlO_x barrier.

源语言	英语
文章编号	042502
期刊	Applied Physics Letters
卷	99
期	4
DOI	https://doi.org/10.1063/1.3614000
出版状态	已出版 - 25 7月 2011
已对外发布	是

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Feng, G., Wu, H. C., Feng, J. F., & Coey, J. M. D. (2011). Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy. Applied Physics Letters, 99(4), 文章 042502. https://doi.org/10.1063/1.3614000

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title = "Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy",

abstract = "We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.",

author = "G. Feng and Wu, {H. C.} and Feng, {J. F.} and Coey, {J. M.D.}",

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AU - Wu, H. C.

AU - Feng, J. F.

AU - Coey, J. M.D.

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Y1 - 2011/7/25

N2 - We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.

AB - We report the temperature dependent collapse of tunnel magnetoresistance (TMR) in perpendicular anisotropy magnetic tunnel junctions (pMTJs) with AlOx barriers and (Co/Pt)3 multilayer electrodes, due to the coercivity crossover of the top and bottom (Co/Pt)3 stacks. The different temperature dependence of two (Co/Pt)3 stacks in pMTJs is mainly caused by the additional perpendicular anisotropy created at interface between the ferromagnetic electrode and the AlOx barrier.

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Temperature dependent coercivity crossover in pseudo-spin-valve magnetic tunnel junctions with perpendicular anisotropy

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