Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai; Bin Chen; Gang Wang; Emmanuel Soignard; Afsaneh Khosravi; Marco Manca; Xavier Marie; Shery L.Y. Chang; Bernhard Urbaszek; Sefaattin Tongay

doi:10.1002/adma.201605551

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Hui Cai, Bin Chen, Gang Wang, Emmanuel Soignard, Afsaneh Khosravi, Marco Manca, Xavier Marie, Shery L.Y. Chang, Bernhard Urbaszek, Sefaattin Tongay^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

61 引用（Scopus）

源语言	英语
文章编号	1605551
期刊	Advanced Materials
卷	29
期	8
DOI	https://doi.org/10.1002/adma.201605551
出版状态	已出版 - 2月 2017
已对外发布	是

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10.1002/adma.201605551

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@article{7afab33eb6cc4035b44c3e557bf712d4,

title = "Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy",

keywords = "gallium telluride, physical vapor transport, pseudo-1D materials",

author = "Hui Cai and Bin Chen and Gang Wang and Emmanuel Soignard and Afsaneh Khosravi and Marco Manca and Xavier Marie and Chang, {Shery L.Y.} and Bernhard Urbaszek and Sefaattin Tongay",

year = "2017",

month = feb,

doi = "10.1002/adma.201605551",

language = "English",

volume = "29",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "8",

}

TY - JOUR

T1 - Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

AU - Cai, Hui

AU - Chen, Bin

AU - Wang, Gang

AU - Soignard, Emmanuel

AU - Khosravi, Afsaneh

AU - Manca, Marco

AU - Marie, Xavier

AU - Chang, Shery L.Y.

AU - Urbaszek, Bernhard

AU - Tongay, Sefaattin

PY - 2017/2

Y1 - 2017/2

KW - gallium telluride

KW - physical vapor transport

KW - pseudo-1D materials

UR - http://www.scopus.com/inward/record.url?scp=85006968722&partnerID=8YFLogxK

U2 - 10.1002/adma.201605551

DO - 10.1002/adma.201605551

M3 - Article

C2 - 27990702

AN - SCOPUS:85006968722

SN - 0935-9648

VL - 29

JO - Advanced Materials

JF - Advanced Materials

IS - 8

M1 - 1605551

ER -