TY - JOUR
T1 - Synthesis and Reactivity of Stable Open-Shell Gallylene
AU - Bazyakina, Natalia L.
AU - Skatova, Alexandra A.
AU - Moskalev, Mikhail V.
AU - Baranov, Evgeny V.
AU - Koptseva, Tatyana S.
AU - Ketkov, Sergey Yu
AU - Yang, Xiao Juan
AU - Fedushkin, Igor L.
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/3/17
Y1 - 2025/3/17
N2 - Treatment of an excess of gallium metal with iodine and 1,2-bis[(2,6-dibenzhydryl-4-methylphenyl)imino]acenaphthene (ArBIG-bian) in toluene at reflux affords the deep green radical [ArBIG-bianGaI2] (1). Product 1 can also be synthesized by reacting ArBIG-bian with “GaI” in toluene. The chloride and bromide derivatives, [ArBIG-bianGaCl2] (2) and [ArBIG-bianGaBr2] (3), were prepared by the reactions of corresponding gallium(III) halides with ArBIG-bian in the presence of an excess of gallium metal in toluene. The reduction of radical 1 by potassium metal in toluene produces stable gallylene with a paramagnetic ligand [ArBIG-bianGa] (4). The reaction of 4 with n-propyl bromide (1:1) affords gallium(III) derivatives, 3 and [ArBIG-bianGanPr] (5). In the course of the reaction of 4 with tetramethylthiuram disulfide (2:1), the gallium(I) center transfers two electrons: one to metallacycle and another one to the S-S bond of the substrate. The resulting product is the gallium(III) derivative [ArBIG-bianGaS2CNMe2] (6). Complexes 1-6 have been characterized by elemental analysis and IR spectroscopy, and their molecular structures have been determined by single-crystal X-ray analysis. The paramagnetic complexes 1-4 have been characterized by ESR spectroscopy and the diamagnetic compounds 5 and 6 by NMR spectroscopy. Based on DFT calculations, the electronic structures of molecules 2-5 and the thermodynamics of reactions accompanying the interaction of 4 with n-propyl bromide were studied. The computational results confirm the localization of the radical center in molecules 2-4 on the bian fragment and visualize the gallium lone pair directed along the NGaN bisector in 4. Thermodynamically favorable reactions leading to the 3 and 5 products have been identified.
AB - Treatment of an excess of gallium metal with iodine and 1,2-bis[(2,6-dibenzhydryl-4-methylphenyl)imino]acenaphthene (ArBIG-bian) in toluene at reflux affords the deep green radical [ArBIG-bianGaI2] (1). Product 1 can also be synthesized by reacting ArBIG-bian with “GaI” in toluene. The chloride and bromide derivatives, [ArBIG-bianGaCl2] (2) and [ArBIG-bianGaBr2] (3), were prepared by the reactions of corresponding gallium(III) halides with ArBIG-bian in the presence of an excess of gallium metal in toluene. The reduction of radical 1 by potassium metal in toluene produces stable gallylene with a paramagnetic ligand [ArBIG-bianGa] (4). The reaction of 4 with n-propyl bromide (1:1) affords gallium(III) derivatives, 3 and [ArBIG-bianGanPr] (5). In the course of the reaction of 4 with tetramethylthiuram disulfide (2:1), the gallium(I) center transfers two electrons: one to metallacycle and another one to the S-S bond of the substrate. The resulting product is the gallium(III) derivative [ArBIG-bianGaS2CNMe2] (6). Complexes 1-6 have been characterized by elemental analysis and IR spectroscopy, and their molecular structures have been determined by single-crystal X-ray analysis. The paramagnetic complexes 1-4 have been characterized by ESR spectroscopy and the diamagnetic compounds 5 and 6 by NMR spectroscopy. Based on DFT calculations, the electronic structures of molecules 2-5 and the thermodynamics of reactions accompanying the interaction of 4 with n-propyl bromide were studied. The computational results confirm the localization of the radical center in molecules 2-4 on the bian fragment and visualize the gallium lone pair directed along the NGaN bisector in 4. Thermodynamically favorable reactions leading to the 3 and 5 products have been identified.
UR - http://www.scopus.com/inward/record.url?scp=85219142484&partnerID=8YFLogxK
U2 - 10.1021/acs.inorgchem.4c04768
DO - 10.1021/acs.inorgchem.4c04768
M3 - Article
AN - SCOPUS:85219142484
SN - 0020-1669
VL - 64
SP - 4892
EP - 4901
JO - Inorganic Chemistry
JF - Inorganic Chemistry
IS - 10
ER -