Synthesis and characterization of crystalline gallium nitride nanoribbon rings

Xu Xiang; Chuanbao Cao; Fulin Huang; Ruitao Lv; Hesun Zhu

doi:10.1016/j.jcrysgro.2003.11.043

Synthesis and characterization of crystalline gallium nitride nanoribbon rings

Xu Xiang, Chuanbao Cao^*, Fulin Huang, Ruitao Lv, Hesun Zhu

^*此作品的通讯作者

材料学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

39 引用（Scopus）

摘要

Crystalline gallium nitride nanoribbon rings have been fabricated through a simple catalytic reaction using metallic Ga as source materials. The as-synthesized products were characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, transmission electron microscopy, and selected-area electron diffraction. The results revealed that the products are pure, crystalline GaN with hexagonal wurtzite structure. The widths of the nanoribbon rings were in the range of 150-350nm and the diameters were 3-8μm. The formation mechanism of nanoribbon rings was discussed tentatively.

源语言	英语
页（从-至）	25-29
页数	5
期刊	Journal of Crystal Growth
卷	263
期	1-4
DOI	https://doi.org/10.1016/j.jcrysgro.2003.11.043
出版状态	已出版 - 1 3月 2004

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Xiang, X., Cao, C., Huang, F., Lv, R., & Zhu, H. (2004). Synthesis and characterization of crystalline gallium nitride nanoribbon rings. Journal of Crystal Growth, 263(1-4), 25-29. https://doi.org/10.1016/j.jcrysgro.2003.11.043

@article{0027979e97bf416f85f8d72317dbe829,

title = "Synthesis and characterization of crystalline gallium nitride nanoribbon rings",

abstract = "Crystalline gallium nitride nanoribbon rings have been fabricated through a simple catalytic reaction using metallic Ga as source materials. The as-synthesized products were characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, transmission electron microscopy, and selected-area electron diffraction. The results revealed that the products are pure, crystalline GaN with hexagonal wurtzite structure. The widths of the nanoribbon rings were in the range of 150-350nm and the diameters were 3-8μm. The formation mechanism of nanoribbon rings was discussed tentatively.",

keywords = "A1. Characterization, A3. Chemical vapor deposition processes, B1. Gallium compounds, B1. Nanomaterials, B1. Nitrides, B2. Semiconducting III-V materials",

author = "Xu Xiang and Chuanbao Cao and Fulin Huang and Ruitao Lv and Hesun Zhu",

year = "2004",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2003.11.043",

language = "English",

volume = "263",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Synthesis and characterization of crystalline gallium nitride nanoribbon rings

AU - Xiang, Xu

AU - Cao, Chuanbao

AU - Huang, Fulin

AU - Lv, Ruitao

AU - Zhu, Hesun

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Crystalline gallium nitride nanoribbon rings have been fabricated through a simple catalytic reaction using metallic Ga as source materials. The as-synthesized products were characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, transmission electron microscopy, and selected-area electron diffraction. The results revealed that the products are pure, crystalline GaN with hexagonal wurtzite structure. The widths of the nanoribbon rings were in the range of 150-350nm and the diameters were 3-8μm. The formation mechanism of nanoribbon rings was discussed tentatively.

AB - Crystalline gallium nitride nanoribbon rings have been fabricated through a simple catalytic reaction using metallic Ga as source materials. The as-synthesized products were characterized using scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, transmission electron microscopy, and selected-area electron diffraction. The results revealed that the products are pure, crystalline GaN with hexagonal wurtzite structure. The widths of the nanoribbon rings were in the range of 150-350nm and the diameters were 3-8μm. The formation mechanism of nanoribbon rings was discussed tentatively.

KW - A1. Characterization

KW - A3. Chemical vapor deposition processes

KW - B1. Gallium compounds

KW - B1. Nanomaterials

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

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SN - 0022-0248

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JO - Journal of Crystal Growth

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Synthesis and characterization of crystalline gallium nitride nanoribbon rings

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