摘要
Ultrafast measurement system for transient electrical signals using a scanning tunneling microscope has been developed. The key of the system is a probe integrated with a low-temperature grown GaAs photoconductive switch that is used as a sampler of transient signals generated by ultrashort laser pulses with another photoconductive switch. The tunneling tip is attached to a coplanar strip transmission line with an integrated photoconductive switch. The probe fabrication process and tip characteristics have been reported here. A topographic STM image scanned with such a probe on a gold sample on Si substrate is given. A transient signal with 1.2 ps pulse width in tunneling mode and 2.0 ps in contact mode were observed with the probe.
源语言 | 英语 |
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文章编号 | 98 |
页(从-至) | 610-614 |
页数 | 5 |
期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
卷 | 5633 |
DOI | |
出版状态 | 已出版 - 2005 |
活动 | Advanced Materials and Devices for Sensing and Imaging II - Beijing, 中国 期限: 8 11月 2004 → 10 11月 2004 |