TY - JOUR
T1 - Structural and dielectric properties of ion beam deposited titanium oxynitride thin films
AU - Jia, Liuwei
AU - Lu, Huiping
AU - Ran, Yujing
AU - Zhao, Shujun
AU - Liu, Haonan
AU - Li, Yinglan
AU - Jiang, Zhaotan
AU - Wang, Zhi
N1 - Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Titanium oxynitride (TiO xN y) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (Ea), assisting ion beam current (Ia) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiO xN y (220)-oriented. Proper Ea and low Ia can enhance the (220) orientation in TiO xN y thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher Ea and Ia make the TiO xN y films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.
AB - Titanium oxynitride (TiO xN y) thin films were fabricated by ion beam-assisted sputtering deposition. Effects of oxygen contribution, assisting ion energy (Ea), assisting ion beam current (Ia) on the microstructure and dielectric behavior of the films were analyzed. The results show that increasing O content made the films to turn from fcc-TiN (111)-oriented to fcc TiO xN y (220)-oriented. Proper Ea and low Ia can enhance the (220) orientation in TiO xN y thin films. The increase in oxygen content leads to the red-shift of plasmonic resonant frequency and makes the films more dielectric. Higher Ea and Ia make the TiO xN y films more metallic. Atomic composition is an important factor underlying the results. The study provides a method to control the plasmonic properties of oxynitride films in a wide range by atomic composition and assisting ions.
UR - http://www.scopus.com/inward/record.url?scp=85053799798&partnerID=8YFLogxK
U2 - 10.1007/s10853-018-2923-y
DO - 10.1007/s10853-018-2923-y
M3 - Article
AN - SCOPUS:85053799798
SN - 0022-2461
VL - 54
SP - 1452
EP - 1461
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 2
ER -