TY - JOUR
T1 - Stable phases of freestanding monolayer TiO2
T2 - Emergence of out-of-plane ferroelectricity
AU - Bu, Xiangtian
AU - Liu, Haitao
AU - Li, Yuanchang
N1 - Publisher Copyright:
© 2024 American Physical Society.
PY - 2024/4/15
Y1 - 2024/4/15
N2 - Despite being successfully synthesized [Zhang, Nat. Mater. 20, 1073 (2021)1476-112210.1038/s41563-020-00899-9], the monolayer structure of stable hexagonal TiO2 is unknown, and it is not even clear whether it can exist in a freestanding form. Through first-principles calculations, we have identified two previously uncharted stable structures, namely, distorted 1×3 1T-TiO2 and 3×3 1T-TiO2, both of which are energetically more favorable than commonly adopted 1H and 1T phases. Here, structural distortions are characterized by the out-of-plane shifts of Ti atoms due to the pseudo-Jahn-Teller interactions, which break one and all two inversion symmetries of 1T configuration. As a consequence, the 1×3 1T remains centrosymmetric, while the 3×3 1T exhibits out-of-plane ferroelectricity. Electronic structure calculations show that both are wide-band-gap semiconductors with band gaps larger than their bulk counterparts. In this paper, we not only deepen the understanding of structural instability in wide-gap semiconductors but also add a member to the rare family of two-dimensional out-of-plane ferroelectrics.
AB - Despite being successfully synthesized [Zhang, Nat. Mater. 20, 1073 (2021)1476-112210.1038/s41563-020-00899-9], the monolayer structure of stable hexagonal TiO2 is unknown, and it is not even clear whether it can exist in a freestanding form. Through first-principles calculations, we have identified two previously uncharted stable structures, namely, distorted 1×3 1T-TiO2 and 3×3 1T-TiO2, both of which are energetically more favorable than commonly adopted 1H and 1T phases. Here, structural distortions are characterized by the out-of-plane shifts of Ti atoms due to the pseudo-Jahn-Teller interactions, which break one and all two inversion symmetries of 1T configuration. As a consequence, the 1×3 1T remains centrosymmetric, while the 3×3 1T exhibits out-of-plane ferroelectricity. Electronic structure calculations show that both are wide-band-gap semiconductors with band gaps larger than their bulk counterparts. In this paper, we not only deepen the understanding of structural instability in wide-gap semiconductors but also add a member to the rare family of two-dimensional out-of-plane ferroelectrics.
UR - http://www.scopus.com/inward/record.url?scp=85191377701&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.109.165435
DO - 10.1103/PhysRevB.109.165435
M3 - Article
AN - SCOPUS:85191377701
SN - 2469-9950
VL - 109
JO - Physical Review B
JF - Physical Review B
IS - 16
M1 - 165435
ER -