TY - GEN
T1 - Sputtering-Deposited Hafnium Oxide Dielectric for High-Performance InGaZnO Thin Film Transistors
AU - Li, Meng
AU - Dong, Jun Chen
AU - Li, Qi
AU - Han, De Dong
AU - Yu, Zhi Nong
AU - Wang, Yi
AU - Zhang, Xing
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/11/3
Y1 - 2020/11/3
N2 - We fabricate InGaZnO thin film transistors (IGZO TFTs) on glass substrates, where sputtering-deposited hafnium oxide (HfO2) films are utilized as the gate dielectric. The influences of Ar/O2 flux ratio (75/25, 80/20, 85/15, and 90/10) of the HfO2 films on properties of the IGZO TFTs are investigated. The 85/15 IGZO TFTs show the best performance among all the devices, which manifests as a field-effect mobility of 4.79 cm2V-1s-1, a saturation mobility of 6.81 cm2V-1s-1, an on-To-off current ratio over 106, and a sub-Threshold swing of 156.15 mV/decade. By exploring material components, we found that the 85/15 HfO2 film has the least oxygen defects, thus resulting in more ideal stoichiometry and device performance. This work confirms the huge potential of sputtering-deposited HfO2 films to be the high-? dielectric of the IGZO TFTs.
AB - We fabricate InGaZnO thin film transistors (IGZO TFTs) on glass substrates, where sputtering-deposited hafnium oxide (HfO2) films are utilized as the gate dielectric. The influences of Ar/O2 flux ratio (75/25, 80/20, 85/15, and 90/10) of the HfO2 films on properties of the IGZO TFTs are investigated. The 85/15 IGZO TFTs show the best performance among all the devices, which manifests as a field-effect mobility of 4.79 cm2V-1s-1, a saturation mobility of 6.81 cm2V-1s-1, an on-To-off current ratio over 106, and a sub-Threshold swing of 156.15 mV/decade. By exploring material components, we found that the 85/15 HfO2 film has the least oxygen defects, thus resulting in more ideal stoichiometry and device performance. This work confirms the huge potential of sputtering-deposited HfO2 films to be the high-? dielectric of the IGZO TFTs.
UR - http://www.scopus.com/inward/record.url?scp=85099253501&partnerID=8YFLogxK
U2 - 10.1109/ICSICT49897.2020.9278130
DO - 10.1109/ICSICT49897.2020.9278130
M3 - Conference contribution
AN - SCOPUS:85099253501
T3 - 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
BT - 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020 - Proceedings
A2 - Yu, Shaofeng
A2 - Zhu, Xiaona
A2 - Tang, Ting-Ao
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2020
Y2 - 3 November 2020 through 6 November 2020
ER -