Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation

Bin Liu, Feng Wang*, Xuyang Li, Dan Kuang, Xianwen Liu, Shuo Zhang, Zongchi Bao, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Zhinong Yu*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

In this study, we developed an a-InGaZnO (a-IGZO) thin film transistor (TFT) structure that inserts a sputtered AlOx intermediate layer (IL) within the active layer. The IL not only effectively blocks hydrogen (H) diffusion from the gate insulation (GI) layer to the upper region of a-IGZO but also modifies the energy band structure of the bottom channel region and creates a locally low electron concentration that counteracts the excess electron donated by diffused H. Compared to conventional TFTs, the TFT with the IL exhibits impressive electrical characteristics, including a high saturation mobility (μsat) of 14.5 cm2 V−1 s−1, an on/off current ratio (Ion/Ioff) of 6.2 × 108, and a low subthreshold swing (SS) of 0.16 V/dec. Furthermore, this structure exhibits remarkable stability under negative bias stress and negative bias illumination stress, with ΔVth values of 1.1 and 1.5 V, respectively. The integration of the IL provides a promising approach for enhancing the performance of a-IGZO TFTs, paving the way for next-generation display technologies.

源语言英语
文章编号063504
期刊Applied Physics Letters
125
6
DOI
出版状态已出版 - 5 8月 2024

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Liu, B., Wang, F., Li, X., Kuang, D., Liu, X., Zhang, S., Bao, Z., Yuan, G., Guo, J., Ning, C., Shi, D., & Yu, Z. (2024). Sputtered AlOx interlayer for improving performance of a-InGaZnO TFTs: A study on hydrogen diffusion mitigation and electron modulation. Applied Physics Letters, 125(6), 文章 063504. https://doi.org/10.1063/5.0212863