SiN_x/SiO_xN_y叠层结构防潮能力的研究

The influences of process parameters on the moisture barrier properties of SiN_x and SiO_xN_y prepared by plasma enhanced chemical vapor deposition (PECVD) were investigated, and the water vapor permeation rate (WVTR) of SiN_x/SiO_xN_y stacks film was tested. The results show that both the single-layer SiN_x film and the SiO_xN_y film have a critical thickness. When the film thickness is greater than the critical value, increasing the thickness does not significantly improve the WVTR of the film. When the deposition temperature increased from 50 ℃ to 250 ℃, the WVTR of the SiN_x film decreased from 0.031 g/(m²•day) to 0.010 g/(m²•day). When SiO_xN_y is deposited, increasing the N₂O flux does not affect the WVTR of the film, but it can effectively improve the bending properties of the film. Finally, the WVTR of the four stacks SiN_x/SiO_xN_y films fell to 4.4×10^-4 g/(m²•day). The significant improvement in moisture barrier capacity of the film is attributed to the fact that the stackstructure can effectively decouple the defects between the layers and extend the water vapor permeation path.