@inproceedings{dd12e771e3844902ac0c2712f29b6728,
title = "Single-layer graphene field-effect transistors with ferroelectric PZT gate",
abstract = "Single-layer graphene (SLG) was transferred onto lead-zirconate-titanate (PZT) substrate to investigate the transport properties of graphene-based field effect transistors (FETs) by ferroelectric gating. The SLG FETs with PZT gate exhibited p-type characteristics with a large memory window of about 5.65V and an on/off current ratio of about 4.7 when Vgmax was 6V. The ferroelectric gate graphene field-effect transistors (Fe-GFETs) exhibit enhanced stability through a bi-stable current state operation with long retention time. The trapping/de-trapping of charge carriers in the interface states and the polarization screening from water molecules located between graphene and PZT are proposed to be responsible for the anti-hysteresis behaviors of the Fe-GFETs.",
author = "Xiaowen Zhang and Dan Xie and Jianlong Xu and Haiming Zhao and Cheng Zhang and Yilin Sun and Yuanfan Zhao and Tingting Feng and Gang Li and Tianling Ren",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",
year = "2014",
month = jan,
day = "23",
doi = "10.1109/ICSICT.2014.7021336",
language = "English",
series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Jia Zhou and Ting-Ao Tang",
booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",
address = "United States",
}