Simulation of temperature profile and design of heat transfer structure for reactor of film growth on Si-wafer

The temperature distributionin chemical vapor deposition (CVD) reactor, especially on the surfaces of the Si-wafer, was mathematically modeled, theoretically analyzed, numerically simulated, and experimentally evaluated. The influence of the realistic situation, including but not limited to the pressure, gas flow-rate, and low-pressure induced temperature-jump at the wafer/heater gap, on the temperature profile on Si-wafer surfaces was investigated. The simulated results show that the average temperature on Si-wafer surface increased with an increase of the pressure and/or with a decrease of the gas flow-rate, and that the temperature decreases in radial direction. Moreover, the geometry of the impedance ceramics was designed via simulation to improve the uniformity of temperature distribution on Si-wafer surface because its insertion into the Si-wafer/heater gap is capable of adjusting the temperature profile. We suggest that the simulated results be of some technological interest in design of CVD chamber and control of the film growth.