摘要
A physical model of 0.24μm gate-length and 50μm gate-width AlGaN/GaN HEMTs is designed in the paper including lateral structure and longitudinal material parameters. Then DC and high frequency characteristics are both simulated and analyzed. The results show that the saturation drain current is 0.8A/mm at zero bias and the maximum transconductance is 350mS/mm. The current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 35GHz and 107GHz respectively at-2V gate voltage and 25V drain voltage. The maximum available power gains (MAG) is 10.2dB at 40GHz. Therefore, the structure can be applied to Ka-band.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | Material and Manufacturing Technology IV |
| 页 | 864-867 |
| 页数 | 4 |
| DOI | |
| 出版状态 | 已出版 - 2013 |
| 活动 | 2013 4th International Conference on Material and Manufacturing Technology, ICMMT 2013 - Seoul, 韩国 期限: 11 5月 2013 → 12 5月 2013 |
出版系列
| 姓名 | Advanced Materials Research |
|---|---|
| 卷 | 748 |
| ISSN（印刷版） | 1022-6680 |
会议
| 会议 | 2013 4th International Conference on Material and Manufacturing Technology, ICMMT 2013 |
|---|---|
| 国家/地区 | 韩国 |
| 市 | Seoul |
| 时期 | 11/05/13 → 12/05/13 |
指纹
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Luo, X. B., Yu, W. H., Guo, D. C., & Wang, Z. M. (2013). Simulation of an AlGaN/GaN HEMT for Ka-band. 在 Material and Manufacturing Technology IV (页码 864-867). (Advanced Materials Research; 卷 748). https://doi.org/10.4028/www.scientific.net/AMR.748.864