Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Xiaodong Zhou, Run Wu Zhang, Zeying Zhang, Wanxiang Feng*, Yuriy Mokrousov, Yugui Yao

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

78 引用 (Scopus)

摘要

Manipulating valley-dependent Berry phase effects provides remarkable opportunities for both fundamental research and practical applications. Here, by referring to effective model analysis, we propose a general scheme for realizing topological magneto-valley phase transitions. More importantly, by using valley-half-semiconducting VSi2N4 as an outstanding example, we investigate sign change of valley-dependent Berry phase effects which drive the change-in-sign valley anomalous transport characteristics via external means such as biaxial strain, electric field, and correlation effects. As a result, this gives rise to quantized versions of valley anomalous transport phenomena. Our findings not only uncover a general framework to control valley degree of freedom, but also motivate further research in the direction of multifunctional quantum devices in valleytronics and spintronics.

源语言英语
文章编号160
期刊npj Computational Materials
7
1
DOI
出版状态已出版 - 12月 2021

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