Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

Han Huang; Swee Liang Wong; Yuzhan Wang; Jia Tao Sun; Xingyu Gao; Andrew Thye Shen Wee

doi:10.1021/jp507072p

Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

Han Huang^*, Swee Liang Wong, Yuzhan Wang, Jia Tao Sun, Xingyu Gao, Andrew Thye Shen Wee

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The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

源语言	英语
页（从-至）	24995-24999
页数	5
期刊	Journal of Physical Chemistry C
卷	118
期	43
DOI	https://doi.org/10.1021/jp507072p
出版状态	已出版 - 30 10月 2014
已对外发布	是

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title = "Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)",

abstract = "The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.",

author = "Han Huang and Wong, {Swee Liang} and Yuzhan Wang and Sun, {Jia Tao} and Xingyu Gao and Wee, {Andrew Thye Shen}",

note = "Publisher Copyright: {\textcopyright} 2014 American Chemical Society.",

year = "2014",

month = oct,

day = "30",

doi = "10.1021/jp507072p",

language = "English",

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journal = "Journal of Physical Chemistry C",

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T1 - Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

AU - Huang, Han

AU - Wong, Swee Liang

AU - Wang, Yuzhan

AU - Sun, Jia Tao

AU - Gao, Xingyu

AU - Wee, Andrew Thye Shen

PY - 2014/10/30

Y1 - 2014/10/30

N2 - The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

AB - The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011¯2) ∥ EG(0001) and Bi〈112¯0〉 aligned well with EG〈112¯0〉. Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.

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M3 - Article

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SN - 1932-7447

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JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

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ER -

Scanning tunneling microscope and photoemission spectroscopy investigations of bismuth on epitaxial graphene on SiC(0001)

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