Recombination efficiency in organic single-layer light-emitting diodes at high fields

Shengyi Yang; Zheng Xu; Zhenjia Wang; Xurong Xu

doi:10.1063/1.1410339

Recombination efficiency in organic single-layer light-emitting diodes at high fields

Shengyi Yang^*, Zheng Xu, Zhenjia Wang, Xurong Xu

^*此作品的通讯作者

Beijing Jiaotong University

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.

源语言	英语
页（从-至）	2529-2531
页数	3
期刊	Applied Physics Letters
卷	79
期	16
DOI	https://doi.org/10.1063/1.1410339
出版状态	已出版 - 15 10月 2001
已对外发布	是

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abstract = "By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.",

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AU - Xu, Xurong

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Y1 - 2001/10/15

N2 - By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.

AB - By considering the interaction between charge carriers recombination and transport through the bulk at high fields, the expression of recombination efficiency for single-layer diodes is presented. By parameters calculation, a maximum recombination efficiency is promised for device ITO/ MEH-PPV(120 nm)/Ca, and the same experimental fact for ITO/BEH-PPV(100 nm)/Ca [Y. Kawabe, et al., J. Appl. Phys. 84, 5306 (1998)] proved our theoretical prediction.

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Recombination efficiency in organic single-layer light-emitting diodes at high fields

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