Probing one antiferromagnetic antiphase boundary and single magnetite domain using nanogap contacts

Han Chun Wu*, Mohamed Abid, Byong S. Chun, Rafael Ramos, Oleg N. Mryasov, Igor V. Shvets

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摘要

We have probed one antiferromagnetic (AF) antiphase boundary (APB) and a single Fe3O4 domain using nanogap contacts. Our experiments directly demonstrate that, in the case of probing one AF-APB, a large magnetoresistance (MR), high resistivity, and a high saturation field are observed as compared with the case of probing a single Fe3O 4 domain. The shape of the temperature-dependent MR curves is also found to differ between the single domain and one of the AF-APB measurements, with a characteristic strong temperature dependence for the single domain and temperature independence for the one AF-APB case. We argue that these observations are indicative of profound changes in the electronic transport across APBs. The investigated APB defects increase the activation energy and disturb the long-range charge ordering of monodomain Fe3O 4.

源语言英语
页(从-至)1132-1136
页数5
期刊Nano Letters
10
4
DOI
出版状态已出版 - 14 4月 2010
已对外发布

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Wu, H. C., Abid, M., Chun, B. S., Ramos, R., Mryasov, O. N., & Shvets, I. V. (2010). Probing one antiferromagnetic antiphase boundary and single magnetite domain using nanogap contacts. Nano Letters, 10(4), 1132-1136. https://doi.org/10.1021/nl902973p