Photovoltaic Effect and Evidence of Carrier Multiplication in Graphene Vertical Homojunctions with Asymmetrical Metal Contacts

Jing Jing Chen, Qinsheng Wang, Jie Meng, Xiaoxing Ke, Gustaaf Van Tendeloo, Ya Qing Bie, Junku Liu, Kaihui Liu, Zhi Min Liao*, Dong Sun, Dapeng Yu

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

23 引用 (Scopus)

摘要

Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metal-graphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength dependence of the internal quantum efficiency gives direct evidence of the carrier multiplication effect in graphene. The simple fabrication process, easy scale-up, large photoresponsive active area, and broadband response of the vertical graphene device are very promising for practical applications in optoelectronics and photovoltaics.

源语言英语
页(从-至)8851-8858
页数8
期刊ACS Nano
9
9
DOI
出版状态已出版 - 22 9月 2015
已对外发布

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Chen, J. J., Wang, Q., Meng, J., Ke, X., Tendeloo, G. V., Bie, Y. Q., Liu, J., Liu, K., Liao, Z. M., Sun, D., & Yu, D. (2015). Photovoltaic Effect and Evidence of Carrier Multiplication in Graphene Vertical Homojunctions with Asymmetrical Metal Contacts. ACS Nano, 9(9), 8851-8858. https://doi.org/10.1021/acsnano.5b02356