TY - GEN
T1 - Phase transformation experimental study of IC chip power supplying grounding on ferroelectric ceramic porous material
AU - Zhang, Zhenhai
AU - Cui, Zhanzhong
AU - Yan, Jinglong
AU - Li, Kejie
PY - 2010
Y1 - 2010
N2 - We demonstrated both experimentally and in theory analysis and calculation that the PSZT nanoporous ferroelectric generator (FEG) system can perform as a micro-power supplying source for IC chip. The nanoceramic phase transition under transverse shock wave compression can charge external storage capacitor. The nanoporous microstructure ferroelectric micropulsed-power system is capable of generating low output voltage pulses with amplitudes 54.2V and with transferred energy 1.73mJ, and supplying IC chip with micro power sources. We developed the methodology for theory analysis and experimental operation of the ferroelectric generator. The experimental results were in good agreement with the theory analysis.
AB - We demonstrated both experimentally and in theory analysis and calculation that the PSZT nanoporous ferroelectric generator (FEG) system can perform as a micro-power supplying source for IC chip. The nanoceramic phase transition under transverse shock wave compression can charge external storage capacitor. The nanoporous microstructure ferroelectric micropulsed-power system is capable of generating low output voltage pulses with amplitudes 54.2V and with transferred energy 1.73mJ, and supplying IC chip with micro power sources. We developed the methodology for theory analysis and experimental operation of the ferroelectric generator. The experimental results were in good agreement with the theory analysis.
UR - http://www.scopus.com/inward/record.url?scp=77951655278&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424716
DO - 10.1109/INEC.2010.5424716
M3 - Conference contribution
AN - SCOPUS:77951655278
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 628
EP - 629
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -