Performance analysis of PQDCF-coated silicon image sensor using Monte-Carlo ray-trace simulation

Perovskite quantum dots embedded composite film (PQDCF) exhibits strong photoluminescence emissions and is expected to be excellent down-shifting material for enhancing ultraviolet (UV) response of silicon devices. In this work, light conversion process is analyzed by combining the experiments with Monte-Carlo ray-trace simulation. Results show that external quantum efficiency (EQE) in the UV region was mainly determined by absorption loss and match of peak wavelength. Moreover, resolution was correlated with thickness and reabsorption. This conclusion provides a guideline for designing novel materials with enhanced UV sensitivity and an EQE of 28% is predicted. Our experimental results showed that the use of red emissive PQDCF achieved an EQE of 20%.