Option of resolution enhancement technology in advanced lithography

Li Yanqiu*, Zhou Yuan

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

4 引用 (Scopus)

摘要

Hyper-numerical aperture ArF scanner has being designed to meet the needs of 45nm node. Resolution enhancement technology, such as phase shift mask, off-axis illumination, and innovation processing technology must be employed in hyper-numerical aperture ArF lithography. However the cross talk of phase shift mask, off axis illumination, polarization effect, and resist stack impacts lithography performance significantly. Option of resolution enhancement technology is presented in conjunction with optimal dual-layers bottom anti-refactive coating and polarized illumination by our program and Prolith 9.0. Multi options of resolution enhancement technology are obtained to maintain a small CD, good CD uniformity (CDU), reasonable process window (PW) and fidelity of resist profile.

源语言英语
主期刊名3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies
主期刊副标题Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
DOI
出版状态已出版 - 2007
活动3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems - Chengdu, 中国
期限: 8 7月 200712 7月 2007

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
6724
ISSN(印刷版)0277-786X

会议

会议3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2007: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems
国家/地区中国
Chengdu
时期8/07/0712/07/07

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