摘要
We investigated heterojunctions of Si with large-area high-quality monolayer and multi-layer graphene, as well as thin transparent graphite. We show that by controlling the transmittance and sheet resistance of large-area graphitic electrodes, it is possible to obtain solar cells with power conversion efficiency (PCE) exceeding 3% without any doping requirements. Our calculations indicate that such junctions can form extremely robust interfaces with near-100% internal quantum efficiency. Under optimized doping conditions, power conversion efficiencies increase almost universally by a factor of 2.5. Optimized conditions for reproducibly obtaining cells with PCE > 5% are presented, with the best PCE obtained ∼7.5% with short-circuit current density exceeding 24 mA/cm2.
源语言 | 英语 |
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页(从-至) | 329-337 |
页数 | 9 |
期刊 | Carbon |
卷 | 57 |
DOI | |
出版状态 | 已出版 - 6月 2013 |
已对外发布 | 是 |