Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

Jia Tao Zhang; Chuan Bao Cao; Qiang Lv; Chao Li; He Sun Zhu

doi:10.1023/A:1024492513927

Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

Jia Tao Zhang, Chuan Bao Cao^*, Qiang Lv, Chao Li, He Sun Zhu

^*此作品的通讯作者

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

Carbon nitride (CM_x) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C₄H₄N₄) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CN_x films. The band gaps (E_opt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and E_opt. The electrical resistivities of the films on Si wafers are in the 10⁹-10¹⁰ Ω cm range.

源语言	英语
页（从-至）	2559-2562
页数	4
期刊	Journal of Materials Science
卷	38
期	12
DOI	https://doi.org/10.1023/A:1024492513927
出版状态	已出版 - 15 7月 2003

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abstract = "Carbon nitride (CMx) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C4H4N4) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CNx films. The band gaps (Eopt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and Eopt. The electrical resistivities of the films on Si wafers are in the 109-1010 Ω cm range.",

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T1 - Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

AU - Zhang, Jia Tao

AU - Cao, Chuan Bao

AU - Lv, Qiang

AU - Li, Chao

AU - Zhu, He Sun

PY - 2003/7/15

Y1 - 2003/7/15

N2 - Carbon nitride (CMx) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C4H4N4) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CNx films. The band gaps (Eopt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and Eopt. The electrical resistivities of the films on Si wafers are in the 109-1010 Ω cm range.

AB - Carbon nitride (CMx) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C4H4N4) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CNx films. The band gaps (Eopt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and Eopt. The electrical resistivities of the films on Si wafers are in the 109-1010 Ω cm range.

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Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

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