Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell

Ali Imran, Jianliang Jiang*, Debora Eric, Muhammad Yousaf

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

4 引用 (Scopus)

摘要

Quantum Dots (QDs) intermediate band solar cells (IBSC) are the most attractive candidates for the next generation of photovoltaic applications. In this paper, theoretical model of InAs/GaAs device has been proposed, where we have calculated the effect of variation in the thickness of intrinsic and IB layer on the efficiency of the solar cell using detailed balance theory. IB energies has been optimized for different IB layers thickness. Maximum efficiency 46.6% is calculated for IB material under maximum optical concentration.

源语言英语
主期刊名2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics
主期刊副标题Materials and Devices
编辑Xingjun Wang, Baojun Li, Ya Sha Yi
出版商SPIE
ISBN(电子版)9781510617551
DOI
出版状态已出版 - 2018
活动2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics: Materials and Devices, OIT 2017 - Beijing, 中国
期限: 28 10月 201730 10月 2017

出版系列

姓名Proceedings of SPIE - The International Society for Optical Engineering
10622
ISSN(印刷版)0277-786X
ISSN(电子版)1996-756X

会议

会议2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics: Materials and Devices, OIT 2017
国家/地区中国
Beijing
时期28/10/1730/10/17

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引用此

Imran, A., Jiang, J., Eric, D., & Yousaf, M. (2018). Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell. 在 X. Wang, B. Li, & Y. S. Yi (编辑), 2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics: Materials and Devices 文章 106220A (Proceedings of SPIE - The International Society for Optical Engineering; 卷 10622). SPIE. https://doi.org/10.1117/12.2288107