Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

Xue Chen, Bingkun Chen, Bei Jiang, Tengfei Gao, Gang Shang, Su Ting Han, Chi Ching Kuo, Vellaisamy A.L. Roy, Ye Zhou*

*此作品的通讯作者

科研成果: 期刊稿件文献综述同行评审

76 引用 (Scopus)

摘要

Simulating biological synaptic functionalities through artificial synaptic devices opens up an innovative way to overcome the von Neumann bottleneck at the device level. Artificial optoelectronic synapses provide a non-contact method to operate the devices and overcome the shortcomings of electrical synaptic devices. With the advantages of high photoelectric conversion efficiency, adjustable light absorption coefficient, and broad spectral range, nanowires (NWs)-based optoelectronic synapses have attracted wide attention. Herein, to better promote the applications of nanowires-based optoelectronic synapses for future neuromorphic systems, the functionalities of optoelectronic synaptic devices and the current progress of NWs optoelectronic synaptic devices in UV–vis–IR spectral range are introduced. Furthermore, a bridge between NWs-based optoelectronic synaptic device and the neuromorphic system is established. Challenges for the forthcoming development of NWs optoelectronic synapses are also discussed. This review may offer a vision into the design and neuromorphic applications of NWs-based optoelectronic synaptic devices.

源语言英语
文章编号2208807
期刊Advanced Functional Materials
33
1
DOI
出版状态已出版 - 3 1月 2023
已对外发布

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