Many-Body Effect and Device Performance Limit of Monolayer InSe

Due to a higher environmental stability than few-layer black phosphorus and a higher carrier mobility than few-layer dichalcogenides, two-dimensional (2D) semiconductor InSe has become quite a promising channel material for the next-generation field-effect transistors (FETs). Here, we provide the investigation of the many-body effect and transistor performance scaling of monolayer (ML) InSe based on ab initio GW-Bethe-Salpeter equation approaches and quantum transport simulations, respectively. The fundamental band gap of ML InSe is indirect and 2.60 eV. The optical band gap of ML InSe is 2.50 eV for the in-plane polarized light, with the corresponding exciton binding energy of 0.58 eV. The ML InSe metal oxide semiconductor FETs (MOSFETs) show excellent performances with reduced short-channel effects. The on-current, delay time, and dynamic power indicator of the optimized n-and p-Type ML InSe MOSFETs can satisfy the high-performance and low-power requirements of the International Technology Roadmap for Semiconductors 2013 both down to 3-5 nm gate length in the ballistic limit. Therefore, a new avenue is opened to continue Moore's law down to 3 nm by utilizing 2D InSe.