Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

Jingchun Wang; Floriano Cuccureddu; Rafael Ramos; Cormac O. Coileain; Igor V. Shvets; Han Chun Wu

doi:10.1142/S2010324719500048

Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

Jingchun Wang, Floriano Cuccureddu, Rafael Ramos, Cormac O. Coileain, Igor V. Shvets, Han Chun Wu^*

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

源语言	英语
文章编号	1950004
期刊	SPIN
卷	9
期	1
DOI	https://doi.org/10.1142/S2010324719500048
出版状态	已出版 - 1 3月 2019

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abstract = "We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.",

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author = "Jingchun Wang and Floriano Cuccureddu and Rafael Ramos and Coileain, {Cormac O.} and Shvets, {Igor V.} and Wu, {Han Chun}",

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AU - Wang, Jingchun

AU - Cuccureddu, Floriano

AU - Ramos, Rafael

AU - Coileain, Cormac O.

AU - Shvets, Igor V.

AU - Wu, Han Chun

PY - 2019/3/1

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N2 - We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

AB - We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

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KW - magnetoresistance

KW - nanowire

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Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

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